Full text loading...
(Color online) An atomic force micrograph of a typical SSM device consisting of two etched trenches. Also schematically shown are the two bias contacts.
(a) characteristics of a typical SSM measured at . (b) Experimental results of the memory effect, performed with test pulses at −0.5 V, and state-switching voltages of ±1 V. After each pulse of +1 V, the current remains zero during test pulses of −0.5 V, corresponding to the memory state of 0. After each pulse of −1 V, the current becomes nonzero during test pulses, corresponding to the memory state of 1.
Experimental results of the memory effect at room temperature, performed with test pulses of −0.5 V, and state-switching voltages of ±4 V.
(Color online) (a) A sketch of an SSM. (b) The conduction-band profile along the dashed line in (a). (c) When the applied bias is beyond the negative threshold voltage, , the surface states will be discharged by charge transfer into the channel. The opposite process happens if the applied bias is beyond the positive threshold, (d).
Article metrics loading...