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Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization
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10.1063/1.1852715
/content/aip/journal/apl/86/4/10.1063/1.1852715
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1852715
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the experiment setup for the and measurements: (a) movable sample holder, (b) target, (c) grid, (d) metal plate, (e) Faraday cup, and (A1) and (A2) electrometers.

Image of FIG. 2.
FIG. 2.

Positive SI TOF spectra of HF-Si for (a) , (b) , and (c) . The relative intensity on the vertical axis is proportional to the SI emission yield per incident atom. The total area of the spectrum for is equal to unity.

Image of FIG. 3.
FIG. 3.

Comparison of the yields for the major ions [, , , , , , and ] among the three spectra shown in Fig. 2. For easy comparison, the scale of the vertical axis is defined as the ratio of the yield for each ion to that for the corresponding ion upon the bombardment.

Image of FIG. 4.
FIG. 4.

Positive SI TOF spectra of MD-Si for (a) , (b) , and (c) . The relative intensity on the vertical axis is proportional to the SI emission yield per incident atom. The total area of the spectrum for is equal to unity.

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/content/aip/journal/apl/86/4/10.1063/1.1852715
2005-01-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1852715
10.1063/1.1852715
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