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Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate
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10.1063/1.1852727
/content/aip/journal/apl/86/4/10.1063/1.1852727
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1852727
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Variation of the square of the normalized intensities of the Ni 111, 020, and NiSi 211 x-ray diffraction lines as a function of annealing time during an isothermal heat treatment at 210 °C. Samples are constituted of a Ni (50 nm) on -Si (300 nm) bilayer deposed on a (100)Si substrate.

Image of FIG. 2.
FIG. 2.

DSC thermograms obtained at four different heating rates for the same samples on thinned substrates.

Image of FIG. 3.
FIG. 3.

(a) Comparison between the DSC thermograms and a simulation based on a diffusion controlled growth; (b) comparison between the DSC thermograms and a simulation based on a numerical integration of the linear-parabolic growth law [Eq. (1)].

Image of FIG. 4.
FIG. 4.

Comparison between the intensity of the 020 x-ray diffraction line for an isothermal treatment at 210 °C and a simulation based on the linear-parabolic growth law [Eq. (1)] with the same parameters than those used in Fig. 3(b).

Image of FIG. 5.
FIG. 5.

Variation of the “transition temperature” between linear and parabolic regime with thickness. The variation of the thickness of formed during isothermal (210 and 260 °C) and isochronal heat treatments (10 and 100 K∕min) is plotted for comparison.

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/content/aip/journal/apl/86/4/10.1063/1.1852727
2005-01-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1852727
10.1063/1.1852727
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