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ferroelectric heterostructures for nonvolatile memories
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10.1063/1.1853506
/content/aip/journal/apl/86/4/10.1063/1.1853506
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853506

Figures

Image of FIG. 1.
FIG. 1.

Ferroelectric hysteresis loops measured on the heterostructures before and after poling at , (a) PTL/PTC/PTL, and (b) PTC/PTL/PTC.

Image of FIG. 2.
FIG. 2.

Ferroelectric hysteresis loops measured on the single component films before and after poling at , (a) PTL, and (b) PTC.

Tables

Generic image for table
Table I.

Thickness, , remanent polarization, , coercive voltage, and voltage shifts of the films.

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/content/aip/journal/apl/86/4/10.1063/1.1853506
2005-01-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: (Pb,La)TiO3∕(Pb,Ca)TiO3 ferroelectric heterostructures for nonvolatile memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853506
10.1063/1.1853506
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