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Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth
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10.1063/1.1853508
/content/aip/journal/apl/86/4/10.1063/1.1853508
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853508
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic two-dimensional representation of an amorphous surface during deposition at times and . The atoms deposited in the period are indicated as solid dots. A valley is incorporated as a nano-sized void in the period by overhangs that overgrow. The nano-sized voids in are typically in diameter corresponding to approximately missing silicon atoms.

Image of FIG. 2.
FIG. 2.

(a) The hydrogen content at nano-sized void surfaces and (b) the void fraction vs the substrate temperature . Data are given for five mass growth fluxes [ (◻), (●), (▵), (▾) and (◇)] while . The lines are fits from which the critical temperature is deduced from the intercept with the temperature axis.

Image of FIG. 3.
FIG. 3.

The mass growth flux vs , with the critical temperature as determined from (●) and (◻) in Fig. 2. The lines represent fits of Eq. (2) on the HSM data (dotted line), data (dashed line), and the combination of the HSM and data (solid line), respectively. The activation energies obtained are , , and , respectively.

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/content/aip/journal/apl/86/4/10.1063/1.1853508
2005-01-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853508
10.1063/1.1853508
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