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Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
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10.1063/1.1853530
/content/aip/journal/apl/86/4/10.1063/1.1853530
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853530
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Ga desorption for a series of GaN pulses with gradually decreasing Ga fluxes from at constant . The Ga fluxes in the (b) droplet and (c) intermediate regimes illustrate the determination of the Ga surface coverage (equal to the hatched areas) from its vacuum desorption after growth.

Image of FIG. 2.
FIG. 2.

Evolution of the Ga surface coverage and its characteristic desorption time as a function of the impinging Ga flux for (0001) GaN growth at constant N flux and . Error bars for the surface coverage are ML and for the desorption time, respectively.

Image of FIG. 3.
FIG. 3.

Temperature-dependent Ga surface coverages as a function of the impinging Ga flux, yielding a transition between Ga adlayer and droplet fluxes with an Arrhenius nature and an activation energy of .

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/content/aip/journal/apl/86/4/10.1063/1.1853530
2005-01-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1853530
10.1063/1.1853530
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