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(a) Ga desorption for a series of GaN pulses with gradually decreasing Ga fluxes from at constant . The Ga fluxes in the (b) droplet and (c) intermediate regimes illustrate the determination of the Ga surface coverage (equal to the hatched areas) from its vacuum desorption after growth.
Evolution of the Ga surface coverage and its characteristic desorption time as a function of the impinging Ga flux for (0001) GaN growth at constant N flux and . Error bars for the surface coverage are ML and for the desorption time, respectively.
Temperature-dependent Ga surface coverages as a function of the impinging Ga flux, yielding a transition between Ga adlayer and droplet fluxes with an Arrhenius nature and an activation energy of .
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