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Resistivities and incorporated concentrations for Zn-polar ZnO:N layers and -polar ZnO:N layers grown at 300–600 °C.
curves at room temperature for ZnO:N layers. Sample A—, -polar; sample B—, Zn-polar; sample C—, -polar; sample D—, Zn-polar.
Detailed characteristics for sample D (, Zn-polar). (a) curves at room temperature. The solid line is the theoretical fitting result in a forward bias region. (b) curves measured at 100, 200, 400, and 1000 kHz. Inset—built-in potential as a function of measurement frequency.
Schottky barrier heights and ideality factors for Au Schottky contacts on ZnO:N layers, and resistivities and incorporated concentrations of ZnO:N layers.
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