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Halogen -type doping of chalcopyrite semiconductors
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10.1063/1.1854218
/content/aip/journal/apl/86/4/10.1063/1.1854218
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1854218

Figures

Image of FIG. 1.
FIG. 1.

Phase diagram of CIS indicating the stability region of CIS (gray) and the competing phases. The bold lines ending at points and give the chemical potentials for which the formation energies of and , respectively, are constant and minimal. The points and define the “halogen favored” and “ favored” conditions.

Image of FIG. 2.
FIG. 2.

Defect formation energies as a function of Fermi level for (a) “ favored” (point in Fig. 1) and (b) “ favored” (point ) chemical potential conditions. The vertical arrow marks the equilibrium Fermi energy (equil. ), calculated self-consistently for .

Image of FIG. 3.
FIG. 3.

Calculated defect concentrations in at for (a) “halogen favored” (point in Fig. 1) and (b) “ favored” (point ) conditions. The black bars showing the doping balance (see the text) indicate a net acceptor doping in (a), and a net donor doping in (b).

Tables

Generic image for table
Table I.

Chemical potentials ( in eV) for the CIS host atoms and for the halogen atoms for “halogen favored” conditions (point in Fig. 1) and for “ favored” conditions (point ). : Cu-rich, In- and Se-intermediate, and halogen rich. : Cu-rich, In-rich, and maximally Se-poor.

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/content/aip/journal/apl/86/4/10.1063/1.1854218
2005-01-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Halogen n-type doping of chalcopyrite semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1854218
10.1063/1.1854218
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