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Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
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10.1063/1.1855412
/content/aip/journal/apl/86/4/10.1063/1.1855412
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1855412

Figures

Image of FIG. 1.
FIG. 1.

ZnO reference sample (open circle) and ZnO film grown over -plane sapphire (closed square). (a) and parameters vs energy of the implanted positrons and (b) plot.

Image of FIG. 2.
FIG. 2.

ZnO films grown over -plane sapphire for (closed square) and (open circle). (a) and parameters vs energy of the implanted positrons and (b) plot.

Image of FIG. 3.
FIG. 3.

plot of the cusp positions in all the studied ZnO films.

Tables

Generic image for table
Table I.

Zn vacancy concentration in ZnO films grown over different planes of sapphire.

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/content/aip/journal/apl/86/4/10.1063/1.1855412
2005-01-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1855412
10.1063/1.1855412
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