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Effect of film thickness on the incorporation of Mn interstitials in
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10.1063/1.1855430
/content/aip/journal/apl/86/4/10.1063/1.1855430
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1855430
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Angular scans of the x rays and GaAs RBS signals observed about the and axes for two samples: a 14-nm-thick film with (upper panels); and a 100-nm-thick film with (lower panels).

Image of FIG. 2.
FIG. 2.

XAS spectra for a 14-nm-thick sample, as-grown and after HCl etching.

Image of FIG. 3.
FIG. 3.

The fractions of Mn occupying various lattice sites—substitutional , interstitial , and in random-cluster form —measured by channeling techniques for As samples with film thicknesses between 14 and 120 nm. Data for 14 and 21.7 nm films etched by HCl are also shown as open symbols.

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/content/aip/journal/apl/86/4/10.1063/1.1855430
2005-01-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of film thickness on the incorporation of Mn interstitials in Ga1−xMnxAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1855430
10.1063/1.1855430
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