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In situ XPS analysis of TiAl thin layer on Si before and after oxidation with atomic oxygen. The (a) and (b) spectra show complete transitions to and for both oxidation processes. The spectra (c) and the intensity ratio vs oxidation temperature (d) reveal inhibition of interfacial layer formation.
NEXAFS analysis of TAO thin layers produced with atomic oxygen oxidation at RT and at for . The -edge (a) and -edge (b) spectra show identical O and Ti local binding environments for both oxidation conditions, consistent with XPS analysis.
(Color) HRTEM and EELS analyses of room-temperature oxidized TAO layer grown on Si(100). (a) HRTEM image, (b) elemental maps, and (c) integrated line scans for Al, Si, O and Ti, respectively.
characteristics of the TAO-based MOS capacitors on and with Pt top electrodes, measured at different frequencies.
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