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Hybrid titanium–aluminum oxide layer as alternative high- gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
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10.1063/1.1856137
/content/aip/journal/apl/86/4/10.1063/1.1856137
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856137
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Figures

Image of FIG. 1.
FIG. 1.

In situ XPS analysis of TiAl thin layer on Si before and after oxidation with atomic oxygen. The (a) and (b) spectra show complete transitions to and for both oxidation processes. The spectra (c) and the intensity ratio vs oxidation temperature (d) reveal inhibition of interfacial layer formation.

Image of FIG. 2.
FIG. 2.

NEXAFS analysis of TAO thin layers produced with atomic oxygen oxidation at RT and at for . The -edge (a) and -edge (b) spectra show identical O and Ti local binding environments for both oxidation conditions, consistent with XPS analysis.

Image of FIG. 3.
FIG. 3.

(Color) HRTEM and EELS analyses of room-temperature oxidized TAO layer grown on Si(100). (a) HRTEM image, (b) elemental maps, and (c) integrated line scans for Al, Si, O and Ti, respectively.

Image of FIG. 4.
FIG. 4.

characteristics of the TAO-based MOS capacitors on and with Pt top electrodes, measured at different frequencies.

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/content/aip/journal/apl/86/4/10.1063/1.1856137
2005-01-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856137
10.1063/1.1856137
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