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Hybrid titanium–aluminum oxide layer as alternative high- gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
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10.1063/1.1856137
/content/aip/journal/apl/86/4/10.1063/1.1856137
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856137
/content/aip/journal/apl/86/4/10.1063/1.1856137
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/content/aip/journal/apl/86/4/10.1063/1.1856137
2005-01-20
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856137
10.1063/1.1856137
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