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Study of band structure multiple quantum wells by high-resolution electron microscopy and electron holography
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10.1063/1.1856138
/content/aip/journal/apl/86/4/10.1063/1.1856138
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856138
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

cross-sectional HREM image of well layer for sample 1(a), and for sample 2(b).

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra of samples 1 and 2.

Image of FIG. 3.
FIG. 3.

Electron holograms of samples 1(a) and 2(c). The dark narrow band corresponds to the InGaN layer. (b) and (d) Reconstructed phase images of (a) and (c), respectively.

Image of FIG. 4.
FIG. 4.

Averaged phase shift profiles across InGaN layers of samples 1(a) and 2(b).

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/content/aip/journal/apl/86/4/10.1063/1.1856138
2005-01-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of band structure InxGa1−xN∕GaN multiple quantum wells by high-resolution electron microscopy and electron holography
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856138
10.1063/1.1856138
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