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Control of silicidation in interfaces
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10.1063/1.1856140
/content/aip/journal/apl/86/4/10.1063/1.1856140
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856140
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The XPS spectra of (a) , (b) , and (c) core-levels of the system as a function of deposition time (thickness). peaks and the signature of silicidation are highlighted by arrows in (a) and (c). The oxygen pressure during PLD growth was .

Image of FIG. 2.
FIG. 2.

The XPS spectra of (a) and (b) core-levels of the system as a function of the oxygen pressure during PLD. The prominent variation of HfSi intensity is seen in (b). The roughly estimated film thickness was about ( deposition).

Image of FIG. 3.
FIG. 3.

The XPS spectra of (a) and (b) core-levels of with oxygen pressure , as a function of deposition time. Thicker films were deposited on the same substrate on top of thinner films after XPS measurements. peaks and the signature of silicidation are highlighted by arrows.

Image of FIG. 4.
FIG. 4.

Relation between HfSi formation and the weight change of silicon valence states. The reduction of , concentration (normalized with intensity) is intimately connected with the silicide concentration (normalized by the intensity of ). The dotted line is a guide for the eye.

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/content/aip/journal/apl/86/4/10.1063/1.1856140
2005-01-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of silicidation in HfO2∕Si(100) interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1856140
10.1063/1.1856140
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