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Piezoelectric ultrathin films
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10.1063/1.1857084
/content/aip/journal/apl/86/4/10.1063/1.1857084
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1857084
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AES composition depth profiles of the BTO and LNO films on the Si substrate.

Image of FIG. 2.
FIG. 2.

HRTEM vertical cross section image of the studied sample showing the 3–4 nm thick film combined with microelectron diffraction pattern taken from the film, which shows spots corresponding to crystalline tetragonal phase.

Image of FIG. 3.
FIG. 3.

The leakage current density in vertical to the BTO film plane as a function of applied electric field.

Image of FIG. 4.
FIG. 4.

The current–voltage curve obtained under dc voltages applied in vertical to the BTO film plane in order to determine the breakdown voltage.

Image of FIG. 5.
FIG. 5.

The dynamic change of the cantilever radius of curvature when 30 V dc is applied on the thin film.

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/content/aip/journal/apl/86/4/10.1063/1.1857084
2005-01-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoelectric ultrathin BaTiO3 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1857084
10.1063/1.1857084
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