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AES composition depth profiles of the BTO and LNO films on the Si substrate.
HRTEM vertical cross section image of the studied sample showing the 3–4 nm thick film combined with microelectron diffraction pattern taken from the film, which shows spots corresponding to crystalline tetragonal phase.
The leakage current density in vertical to the BTO film plane as a function of applied electric field.
The current–voltage curve obtained under dc voltages applied in vertical to the BTO film plane in order to determine the breakdown voltage.
The dynamic change of the cantilever radius of curvature when 30 V dc is applied on the thin film.
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