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Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
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10.1063/1.1857090
/content/aip/journal/apl/86/4/10.1063/1.1857090
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1857090
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical cw PL spectra of three GaN on SiC samples at fixed excitation intensity. The spectra are normalized and arbitrarily shifted for clarity. Inset: excitation power density dependence of the ratio of yellow to band edge spectrally integrated luminescence intensities.

Image of FIG. 2.
FIG. 2.

Light induced transient gating decay kinetics in GaN on sapphire samples with different relative YL intensity (corresponding carrier lifetimes are indicated).

Image of FIG. 3.
FIG. 3.

Ratio of yellow (a) and blue (b) luminescence intensity to band-edge luminescence intensity for GaN on sapphire samples with different lifetimes. The lines are a guide for the eye.

Image of FIG. 4.
FIG. 4.

Ratio of yellow (a) and blue (b) luminescence intensity to band-edge luminescence intensity for GaN on SiC samples with different lifetimes. The line is a guide for the eye.

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/content/aip/journal/apl/86/4/10.1063/1.1857090
2005-01-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1857090
10.1063/1.1857090
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