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Electronic band structure, energy levels, and wave function of -type -doping located in layer apart from two coupled QWs boarded by barriers. The distance between the wells is the first QW is thick the second is thick in (a) and (b) and thick in (c). In (b) the calculation were done with injected carrier density of .
Threshold current density vs inverse cavity length of the broad-area two coupled QWs lasers with different doping sheet concentration.
Threshold current density vs inverse cavity length of the broad-area two coupled QWs lasers with different second QW and doping with sheet concentration of .
Basic parameters of coupled two QWs lasers, with thick first QW and different second QW and sheet concentration in the .
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