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nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures
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Image of FIG. 1.
FIG. 1.

(Color online) Schematic view of the STEM/CBED operating mode. The HAADF detector is used to collect a scanning image, while the CBED patterns are imaged with a slow-scan CCD camera. An example of a 2D array of points superimposed to the STEM image of a STI structure, tilted into the ⟨230⟩ zone axis, is shown on the left, together with a CBED pattern, taken in an undeformed silicon region.

Image of FIG. 2.
FIG. 2.

(Color online) (a),(b) Examples of JEMS simulated Si ⟨340⟩ CBED patterns. (a) Structure “strained-1” in Table I; (b) “strained-3.” The shift of the HOLZ lines position with strain is quite evident. Acceleration voltage , sample thickness . (c) Experimental ⟨340⟩ pattern taken at in an undeformed Si region (the HOLZ line skeletonization performed with the ANALYSIS software is shown); note the close similarity with the dynamically calculated patterns.

Image of FIG. 3.
FIG. 3.

(Color online) (a)–(c) STEM/HAADF pictures of the analyzed sample, taken in the ⟨230⟩ (a), ⟨110⟩ (b), and ⟨340⟩ (c) zone axis. From the contrast of the shallow trenches edges the reduction in the projection effect by reducing the tilt angle from 11.3° to 8° is evident. (d),(e) Corresponding 2D strain maps obtained by CBED of the trace of the strain tensor. The trench morphology is superimposed to the map to show the relative positions. Strain units are .


Generic image for table
Table I.

Comparison between the lattice parameters of deformed Si cells, assumed as an input to the JEMS program and the corresponding ones, obtained from the CBED software through a -based minimization procedure. ⟨340⟩ zone axis, .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures