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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited as gate dielectric
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10.1063/1.1861122
/content/aip/journal/apl/86/6/10.1063/1.1861122
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861122
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross sections of (a) an ALD ∕AlGaN∕GaN MOS-HEMT and (b) a conventional AlGaN∕GaN HEMT of similar design.

Image of FIG. 2.
FIG. 2.

Measured (a) characteristics and (b) gate leakage of the MOS-HEMT (solid line) and the baseline HEMT (dashed line).

Image of FIG. 3.
FIG. 3.

Measured characteristics of the MOS-HEMT. The negative output conductance under high gate biases is due to self-heating.

Image of FIG. 4.
FIG. 4.

Measured (a) transfer and (b) transconductance characteristics measured with the MOS-HEMT (solid line) and HEMT (dashed line) in saturation .

Image of FIG. 5.
FIG. 5.

Calculated effective 2D electron mobility vs. effective electric field at the AlGaN∕GaN (squares), ∕InGaAs (triangles), and ∕GaAs (circles) interfaces.

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/content/aip/journal/apl/86/6/10.1063/1.1861122
2005-01-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861122
10.1063/1.1861122
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