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Cross sections of (a) an ALD ∕AlGaN∕GaN MOS-HEMT and (b) a conventional AlGaN∕GaN HEMT of similar design.
Measured (a) characteristics and (b) gate leakage of the MOS-HEMT (solid line) and the baseline HEMT (dashed line).
Measured characteristics of the MOS-HEMT. The negative output conductance under high gate biases is due to self-heating.
Measured (a) transfer and (b) transconductance characteristics measured with the MOS-HEMT (solid line) and HEMT (dashed line) in saturation .
Calculated effective 2D electron mobility vs. effective electric field at the AlGaN∕GaN (squares), ∕InGaAs (triangles), and ∕GaAs (circles) interfaces.
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