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Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride
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10.1063/1.1861129
/content/aip/journal/apl/86/6/10.1063/1.1861129
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861129

Figures

Image of FIG. 1.
FIG. 1.

Cross section TEM image of the device, #2 with Si nanodots.

Image of FIG. 2.
FIG. 2.

The current–voltage characteristics of Si NDs related transport diode. The electron transport (a) and the hole transport (b) at room temperature. Inset of (a) shows the differential conductance.

Image of FIG. 3.
FIG. 3.

The schematic band diagram of the Si NDs diode for the electron transport (a) and the hole transport (b).

Tables

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Table I.

Major parameters of the Si nanodots transport diode.

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/content/aip/journal/apl/86/6/10.1063/1.1861129
2005-01-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861129
10.1063/1.1861129
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