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Schematic of the THz emitter (top). Comparison of C-FDTD (bottom-left) and the analytical (bottom-right) descriptions of a focused radially polarized beam inside a GaAs semiconductor.
Spatiotemporal evolution of the radial (left) and longitudinal (right) current densities within the semiconductor at times −5, 0, and 5 fs relative to the peak of the radially polarized Bessel–Gauss pulse.
THz pulse components originating from the (a) radial and (b) longitudinal current density components detected 1 cm away from the semiconductor surface for fluence values of (i) , (ii) , and (iii) . The emitted radiation pattern is depicted in the inset. Maximum THz emission is obtained at and relative to the normal for pulse components originating from and . The bottom inset in (b) depicts the THz spectrum.
THz emission power vs energy fluence for Bessel–Gauss and Gaussian fs pulses.
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