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Origin of dark counts in avalanche photodiodes operated in Geiger mode
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10.1063/1.1861498
/content/aip/journal/apl/86/6/10.1063/1.1861498
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861498
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of layer design of the APD used in this study.

Image of FIG. 2.
FIG. 2.

Dark count rate as a function of for different excess voltages for APD.

Image of FIG. 3.
FIG. 3.

Experimental and calculated dark count rate as a function of temperature for excess bias of for APD.

Image of FIG. 4.
FIG. 4.

Dependence of on for .

Image of FIG. 5.
FIG. 5.

Dark current—voltage at various temperatures for APD.

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/content/aip/journal/apl/86/6/10.1063/1.1861498
2005-02-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1861498
10.1063/1.1861498
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