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PL spectra of high-resistivity 6H–SiC wafer at (a) room temperature and (b) . Symbol “” denotes relative amplitude factor.
Intensity mapping of the band on high-resistivity 6H–SiC wafer at room temperature: (a) Whole wafer mapping and (b) high-resolution mapping on the central part marked with a square in (a). Whiter regions indicate higher intensity.
Comparison between (a) PL mapping of the band and (b) optical micrograph of etch pits on the region marked with a square in the edge area in Fig. 2(a). White line in the lower left corner in (a) is due to surface roughness and is not an essential signal.
Microscopic comparison between (a) PL mapping of the band and (b) optical micrograph of etch pits on the region marked with a square in Fig. 3.
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