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Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping
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10.1063/1.1862330
/content/aip/journal/apl/86/6/10.1063/1.1862330
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of high-resistivity 6H–SiC wafer at (a) room temperature and (b) . Symbol “” denotes relative amplitude factor.

Image of FIG. 2.
FIG. 2.

Intensity mapping of the band on high-resistivity 6H–SiC wafer at room temperature: (a) Whole wafer mapping and (b) high-resolution mapping on the central part marked with a square in (a). Whiter regions indicate higher intensity.

Image of FIG. 3.
FIG. 3.

Comparison between (a) PL mapping of the band and (b) optical micrograph of etch pits on the region marked with a square in the edge area in Fig. 2(a). White line in the lower left corner in (a) is due to surface roughness and is not an essential signal.

Image of FIG. 4.
FIG. 4.

Microscopic comparison between (a) PL mapping of the band and (b) optical micrograph of etch pits on the region marked with a square in Fig. 3.

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/content/aip/journal/apl/86/6/10.1063/1.1862330
2005-02-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862330
10.1063/1.1862330
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