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Visualization of electrons and holes localized in gate thin film of metal semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
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10.1063/1.1862333
/content/aip/journal/apl/86/6/10.1063/1.1862333
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862333
/content/aip/journal/apl/86/6/10.1063/1.1862333
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/content/aip/journal/apl/86/6/10.1063/1.1862333
2005-02-04
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visualization of electrons and holes localized in gate thin film of metal SiO2–Si3N4–SiO2 semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862333
10.1063/1.1862333
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