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Visualization of electrons and holes localized in gate thin film of metal semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
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10.1063/1.1862333
/content/aip/journal/apl/86/6/10.1063/1.1862333
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862333
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of SNDM system.

Image of FIG. 2.
FIG. 2.

(Color) SNDM image of sample into which both electron and hole were injected. Electrons were injected into one side of the channel, creating a checked pattern.

Image of FIG. 3.
FIG. 3.

(Color) SNDM image of the sample of one time hole injection (a), times cycling (b), times cycling (c). 30 multiple hole-injected sample is also shown in (d).

Image of FIG. 4.
FIG. 4.

(Color) (a) SNDM image when electron was injected after cycling. Electron was injected into one side of the channel and it created a checked pattern; (b) is schematic cross-section diagram of charge distribution in programmed (“0” written) bit.

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/content/aip/journal/apl/86/6/10.1063/1.1862333
2005-02-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visualization of electrons and holes localized in gate thin film of metal SiO2–Si3N4–SiO2 semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862333
10.1063/1.1862333
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