1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped
Rent:
Rent this article for
USD
10.1063/1.1862336
/content/aip/journal/apl/86/6/10.1063/1.1862336
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862336
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical XRD scan of the BFO films grown on (111) SRO∕STO. Inset: high-resolution scan around the (222) reflection for the and doped films.

Image of FIG. 2.
FIG. 2.

loops for the doped BFO, pure BFO, and doped before annealing, after annealing.

Image of FIG. 3.
FIG. 3.

vs plots of pure and doped BFO films. Inset: Langmuir–Child fitting of the curve for the doped film.

Image of FIG. 4.
FIG. 4.

vs plots of pure and doped BFO films. Inset: initial section of the plots, highlighting the linear relation for the doped BFO.

Loading

Article metrics loading...

/content/aip/journal/apl/86/6/10.1063/1.1862336
2005-01-31
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862336
10.1063/1.1862336
SEARCH_EXPAND_ITEM