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Stability of fully deuterated amorphous silicon thin-film transistors
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10.1063/1.1862755
/content/aip/journal/apl/86/6/10.1063/1.1862755
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862755

Figures

Image of FIG. 1.
FIG. 1.

Growth rate of and as a function of deposition pressure showing the transition shifted to a higher pressure in the plasma. (, ). The inset shows the FTIR spectra for intrinsic and at .

Image of FIG. 2.
FIG. 2.

Normalized threshold voltage shift as a function of bias stressing time at for various and samples made with different growth rates.

Image of FIG. 3.
FIG. 3.

as a function of the growth rate at bias stressing temperature. , .

Tables

Generic image for table
Table I.

Structural properties of intrinsic and . The microstructure parameter IR is obtained by dividing the area of vibrational mode by the sum of the areas of and Si–D(Si–H) vibrational modes. The vibrational modes are detected by FTIR, the intrinsic stress by laser diffraction, the band gap and the growth rate are determined by UV-visible spectroscopy and elastic recoil detection is used to determine the H or D content. Field effect mobility was measured in the linear regime with .

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/content/aip/journal/apl/86/6/10.1063/1.1862755
2005-02-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stability of fully deuterated amorphous silicon thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862755
10.1063/1.1862755
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