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Evolution of leakage paths in stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy
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10.1063/1.1862779
/content/aip/journal/apl/86/6/10.1063/1.1862779
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862779
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current images of a annealed sample at positive tip bias . The tip biases are (a) , (b) , (c) and (d) .

Image of FIG. 2.
FIG. 2.

Typical local plot at a leakage spot observed in a current image for a annealed sample. Curves (A) and (B) correspond to the first and second scan at the same spot, respectively.

Image of FIG. 3.
FIG. 3.

Tip bias dependence of the leakage spot density for different imaging areas for (open and closed circles) and (open and closed squares) annealed samples.

Image of FIG. 4.
FIG. 4.

Tip bias dependence of the leakage spot density and current density of and annealed samples for (a) positive and (b) negative tip biases.

Image of FIG. 5.
FIG. 5.

The process where a conductive tip moves above a leakage path is shown schematically in one dimension. When the tip (contact area) is much larger than the leakage path, the size of the leakage path in the current image (b) will be close to the size of the contact area (a).

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/content/aip/journal/apl/86/6/10.1063/1.1862779
2005-02-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution of leakage paths in HfO2∕SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1862779
10.1063/1.1862779
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