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Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy
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10.1063/1.1863446
/content/aip/journal/apl/86/6/10.1063/1.1863446
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1863446
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of a structure defect complex composed of an antisite pair and a vacancy pair ; (b) the energy band structure and the test circuit used for the characterization.

Image of FIG. 2.
FIG. 2.

characteristics of the InAs and QD LEDs at 77 and . The forward bias of the LEDs exhibits two negative differential resistance regions with similar current drop. The reverse bias of the InAs LED at is shown for comparison.

Image of FIG. 3.
FIG. 3.

Current dependence of the EL spectrum of the InAs QD LED at . (a) The LED was firstly biased to at dc, and then different pulse currents (PCA) were superimposed. (b) The LED operated using a fixed pulse current amplitude (PCA) of with different dc currents superimposed at large bias voltage .

Image of FIG. 4.
FIG. 4.

The dc current and PCA dependencies of the integrated EL intensity of the InSb QD LED at .

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/content/aip/journal/apl/86/6/10.1063/1.1863446
2005-02-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/6/10.1063/1.1863446
10.1063/1.1863446
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