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Enhanced sensitivity due to current redistribution in the Hall effect of semiconductor-metal hybrid structures
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10.1063/1.1862326
/content/aip/journal/apl/86/7/10.1063/1.1862326
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1862326
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the semiconductor-metal hybrid structure (top view). The current leads are labeled , , and the voltage probes are labeled through . Dark points indicate the positions, for which the largest effect is found in Fig. 3(b).

Image of FIG. 2.
FIG. 2.

Traces vs in (a) IVVI configurations showing the EMR effect and (b) VIVI configurations. For illustration, the traces for a homogeneous semiconductor without a metallic shunt are included in the figures. They both exhibit at . In (a) the asymmetric trace vs occurs when the voltage probes are not symmetric with respect to the current leads.

Image of FIG. 3.
FIG. 3.

Sensitivity as a function of magnetic field in (a) IVVI and (b) VIVI configurations for, both, a semiconductor-metal hybrid structure, and a homogeneous semiconductor without a metal. In the latter case, is constant (thick dark lines which are horizontal). In (b), the curve for voltage probes at the left-hand corner of each current lead (see dark points in Fig. 1) is included labeled .

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/content/aip/journal/apl/86/7/10.1063/1.1862326
2005-02-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced sensitivity due to current redistribution in the Hall effect of semiconductor-metal hybrid structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1862326
10.1063/1.1862326
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