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Selective lift-off process flow: (a) form -type ohmic contact and deposit a high-reflectivity metal reflector onto the epitaxial surface of the LED epiwafer, (b) bond metal/InGaN MQW LED/Si onto the copper carrier, (c) thin Si substrate by mechanical polishing, (d) remove Si substrate selectively by wet-chemical etching. The inset shows the image after the SLO process.
Photoluminescence spectra at room temperature of before (dashed line) and after (solid line) substrate removal.
(Color) characteristics of the LEDs before (dashed line) and after (solid line) substrate removal. The inset shows an emission image of the LED fabricated on the substrate removal region. The image was taken at under room light and microscope light conditions. The emission wavelength is about .
characteristics of the LEDs before (dashed line) and after (solid line) substrate removal using an on-wafer testing configuration.
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