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Conduction and valence band dispersion curves in the layer plane for (a) and (b) QW structures calculated at room temperature. The energy origin is taken at the extremum of the conduction (heavy hole valence) band of the InGaAsN strained bulk material.
Material gain for (dash line) and (solid line) QW structures at room temperature.
Quasi-Fermi level in the QW conduction (a) and valence (b) bands for GaAs- (dash lines) and - (solid lines) barriers (subtracting the and extrema, respectively) at room temperature.
Maximum gain as a function of the carrier injection density at room temperature for GaAs- (dash line), - (dot line) and - (solid line) barriers.
Left axis: relative difference between the threshold current density of and QW lasers, (black squares, the line is a guide to the eye) as a function of the temperature. Right axis: relative difference between the maximum gain for the two laser structures, , as a function of the temperature (hollow squares).
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