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Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
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10.1063/1.1864253
/content/aip/journal/apl/86/7/10.1063/1.1864253
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1864253
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conduction and valence band dispersion curves in the layer plane for (a) and (b) QW structures calculated at room temperature. The energy origin is taken at the extremum of the conduction (heavy hole valence) band of the InGaAsN strained bulk material.

Image of FIG. 2.
FIG. 2.

Material gain for (dash line) and (solid line) QW structures at room temperature.

Image of FIG. 3.
FIG. 3.

Quasi-Fermi level in the QW conduction (a) and valence (b) bands for GaAs- (dash lines) and - (solid lines) barriers (subtracting the and extrema, respectively) at room temperature.

Image of FIG. 4.
FIG. 4.

Maximum gain as a function of the carrier injection density at room temperature for GaAs- (dash line), - (dot line) and - (solid line) barriers.

Image of FIG. 5.
FIG. 5.

Left axis: relative difference between the threshold current density of and QW lasers, (black squares, the line is a guide to the eye) as a function of the temperature. Right axis: relative difference between the maximum gain for the two laser structures, , as a function of the temperature (hollow squares).

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/content/aip/journal/apl/86/7/10.1063/1.1864253
2005-02-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1864253
10.1063/1.1864253
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