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Polymer thin-film transistors fabricated by dry transfer of polymer semiconductor
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10.1063/1.1865347
/content/aip/journal/apl/86/7/10.1063/1.1865347
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1865347

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of fabrication procedure by dry transfer and schematic cross section of the P3HT TFT.

Image of FIG. 2.
FIG. 2.

Electrical characteristics of P3HT TFTs. (a) Electrical transfer characteristics of the device with PHEMA gate dielectric and P3HT active layer formed by dry transfer and spin-coating methods. (b) Electrical transfer characteristics of the device with PVP gate dielectric and P3HT active layer formed by dry transfer and spin-coating methods. (c) Electrical output characteristics of the device with PHEMA gate dielectric and active layer formed by dry transfer of P3HT film. (d) Electrical output characteristics of the device with PVP gate dielectric and active layer formed by dry transfer of P3HT film.

Tables

Generic image for table
Table I.

Field-effect mobilities in saturation regime, threshold voltages, and on∕off ratios for various polymer dielectrics and process conditions.

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/content/aip/journal/apl/86/7/10.1063/1.1865347
2005-02-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polymer thin-film transistors fabricated by dry transfer of polymer semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/7/10.1063/1.1865347
10.1063/1.1865347
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