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Conventional method of measuring specific contact resistance of p-InP contact (not employed in this letter). (a) Measurement of the metal–-InGaAs contact resistance. (b) The InGaAs between the electrodes is removed by etching, allowing the combined contact resistance to p-InP to be measured. In either case, the contact resistance for a single forward-biased metal–-InGaAs–-InP cannot be isolated from the combined system and must be inferred.
Voltage scanning a ridge waveguide laser. The conductive SVM probe tip is rastered over the cleaved facet and the voltage recorded at each position.
SVM scans of wide-MQW RWG laser, 0:10:190 mA. The layer structure is indicated. Shot noise fluctuations increase on -type material due to the wide depletion region at the tip–sample interface at high bias.
Fractional parasitic voltage drop (power loss, series resistance) of -InP– heterojunction. The average value is 35% over the operating range. The solid line is a theoretical fit of the heterojunction voltage over the total diode voltage (see text).
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