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In situ resistance measurement of the -type contact in InP–InGaAsP coolerless ridge waveguide lasers
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Image of FIG. 1.
FIG. 1.

Conventional method of measuring specific contact resistance of p-InP contact (not employed in this letter). (a) Measurement of the metal–-InGaAs contact resistance. (b) The InGaAs between the electrodes is removed by etching, allowing the combined contact resistance to p-InP to be measured. In either case, the contact resistance for a single forward-biased metal–-InGaAs–-InP cannot be isolated from the combined system and must be inferred.

Image of FIG. 2.
FIG. 2.

Voltage scanning a ridge waveguide laser. The conductive SVM probe tip is rastered over the cleaved facet and the voltage recorded at each position.

Image of FIG. 3.
FIG. 3.

SVM scans of wide-MQW RWG laser, 0:10:190 mA. The layer structure is indicated. Shot noise fluctuations increase on -type material due to the wide depletion region at the tip–sample interface at high bias.

Image of FIG. 4.
FIG. 4.

Fractional parasitic voltage drop (power loss, series resistance) of -InP– heterojunction. The average value is 35% over the operating range. The solid line is a theoretical fit of the heterojunction voltage over the total diode voltage (see text).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers