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Spectroscopic studies of molecular-beam epitaxially grown -doped ZnSe thin films
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10.1063/1.1861952
/content/aip/journal/apl/86/9/10.1063/1.1861952
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1861952
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Four major mechanisms of interband excitation for intrashell mid-IR emission of ions via (a) energy transfer from the bounded exciton, (b) energy transfer (ET) from adjacent DAP, (c) ionization caused by a three-center Auger-type recombination (TCAR) processes, and (d) carrier trapping by ionized impurity.

Image of FIG. 2.
FIG. 2.

Transmission spectra of the thin film sample (a); optical density of the bulk crystal (b) at room temperature; and (c) difference between PL spectra of thin films measured in 90° and 0° light collection geometry.

Image of FIG. 3.
FIG. 3.

RT PL spectra of the transition of ions in thin film: 90° light collection geometry (a) 0° light collection geometry (b), and bulk crystal (c).

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/content/aip/journal/apl/86/9/10.1063/1.1861952
2005-02-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spectroscopic studies of molecular-beam epitaxially grown Cr2+-doped ZnSe thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1861952
10.1063/1.1861952
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