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(Color online) (a) Schematic illustration of steps for transfer printing microstructured silicon ribbons to a plastic substrate. (b) Device structure schematic of a high performance thin film transistor built on a PET substrate. The bottom insets show high and low magnification optical images of a device array. Each device uses four interconnected microstrips of -thick single crystal silicon.
Electrical characterization of the high performance thin film transistor devices on PET substrate. Part (a) shows characteristics of one of the devices. Part (b) shows on a linear (left axis) and logarithm (right axis) plot several transfer characteristics of the transistors measured at a drain-source bias . The threshold voltage values of these devices are displayed on the inset plot. Part (c) shows the distribution of the devices’ field effect mobilities. The inset shows the very compact Gaussian distribution of the gate dielectric capacitances values measured on a array of 256 capacitors.
(Color online) Bending test of the devices built on a -thick PET plastic substrate. Part (a) left inset shows a high-resolution scanning electron microscopy pictures of ribbons solution deposited on the surface of a silicon wafer. The right inset shows a picture of the precision mechanical stage used to frontward (and backward) bend the plastic circuit. Part (b) shows the variation of the dielectric capacitance value together with the device saturation current when the plastic circuits are subject to compressive or tensile mechanical strain. The ITO normalized resistivity is plotted on the right axis.
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