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Adsorption-induced conversion of the carbon nanotube field effect transistor from ambipolar to unipolar behavior
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10.1063/1.1869548
/content/aip/journal/apl/86/9/10.1063/1.1869548
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1869548
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Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) The upper panel shows curves of the DWNT-FET under the influence of ambient air condition with various source-drain voltages. A schematic drawing of the device is given in inset. (b) Scanning electron microscopy figure of the DWNT-FET and high-resolution transmission electron microscopy figure of DWNT used for this work.

Image of FIG. 2.
FIG. 2.

(Color) Transfer characteristics of DWNT-FET under ambient air, vacuum of , and at intermediate pumping stages.

Image of FIG. 3.
FIG. 3.

(Color) Schematic band structure of the carbon nanotube (blue) and the LUMO level of the adsorbators (red), with respect to the Fermi level.

Image of FIG. 4.
FIG. 4.

(Color) Adsorption geometry of oxygen molecule on the wall of the (10,0) nanotube and ab initio band structure the oxygen adsorbed nanotube system. Arrows in (b) indicate oxygen molecular states.

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/content/aip/journal/apl/86/9/10.1063/1.1869548
2005-02-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Adsorption-induced conversion of the carbon nanotube field effect transistor from ambipolar to unipolar behavior
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1869548
10.1063/1.1869548
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