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Suspended single-electron transistors: Fabrication and measurement
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10.1063/1.1870108
/content/aip/journal/apl/86/9/10.1063/1.1870108
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1870108
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High-magnification SEM image of an Al SUSET. The tip of the gate electrode (center up) points to the island. The junctions are barely visible in this picture as two thicker nodular structures along the suspended aluminum wire. The two lines starting from the left and right electrodes and pointing downwards (toward the substrate) are the usual by-product of two-angle evaporation.

Image of FIG. 2.
FIG. 2.

A lower-magnification SEM picture of a suspended single-electron transistor, displaying the effect of etching on the substrate. The structure does not touch the resist for a length of about . The inset in the upper right corner shows the schematic of the measurement.

Image of FIG. 3.
FIG. 3.

Current and conductance as function of bias voltage, showing clearly the defining features of a good-quality SET (Josephson current, JQP, and quasiparticle conductance peak). The inset is a low-bias voltage detail, with a better visible Josephson effect and mild Cooper pair resonant peaks in the current.

Image of FIG. 4.
FIG. 4.

characteristics as a function of temperature. The sharpest features correspond to ; the temperature was then raised close to the critical temperature of Al.

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/content/aip/journal/apl/86/9/10.1063/1.1870108
2005-02-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suspended single-electron transistors: Fabrication and measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1870108
10.1063/1.1870108
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