banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Suspended single-electron transistors: Fabrication and measurement
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

High-magnification SEM image of an Al SUSET. The tip of the gate electrode (center up) points to the island. The junctions are barely visible in this picture as two thicker nodular structures along the suspended aluminum wire. The two lines starting from the left and right electrodes and pointing downwards (toward the substrate) are the usual by-product of two-angle evaporation.

Image of FIG. 2.
FIG. 2.

A lower-magnification SEM picture of a suspended single-electron transistor, displaying the effect of etching on the substrate. The structure does not touch the resist for a length of about . The inset in the upper right corner shows the schematic of the measurement.

Image of FIG. 3.
FIG. 3.

Current and conductance as function of bias voltage, showing clearly the defining features of a good-quality SET (Josephson current, JQP, and quasiparticle conductance peak). The inset is a low-bias voltage detail, with a better visible Josephson effect and mild Cooper pair resonant peaks in the current.

Image of FIG. 4.
FIG. 4.

characteristics as a function of temperature. The sharpest features correspond to ; the temperature was then raised close to the critical temperature of Al.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suspended single-electron transistors: Fabrication and measurement