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Near- and mid-infrared detection using GaAs∕ multiple step quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

The energy band diagram showing the interband and intersubband transitions in a step quantum well for the detection of near- and mid-infrared radiation. The calculated values are based on the low temperature material parameters (given in Ref. 6).

Image of FIG. 2.
FIG. 2.

Measured intersubband absorption spectrum at 300 K as a function of wavelength for a set of polarizations using a waveguide structure.

Image of FIG. 3.
FIG. 3.

characteristics of the detector at different temperatures in the range of 10 to 80 K. The mesa size is and the positive bias corresponds to the cap layer positive.

Image of FIG. 4.
FIG. 4.

The measured photocurrent spectra of the detector at 40 K as a function of wavelength in the near- and mid-infrared regions. The light is incident from a 45° facet polished on the substrate. The bias across the detector is 0.8 V which corresponds to about 10 kV∕cm electric field in the multiple-quantum-well region.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near- and mid-infrared detection using GaAs∕InxGa1−xAs∕InyGa1−yAs multiple step quantum wells