1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
Rent:
Rent this article for
USD
10.1063/1.1871351
/content/aip/journal/apl/86/9/10.1063/1.1871351
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1871351
/content/aip/journal/apl/86/9/10.1063/1.1871351
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/9/10.1063/1.1871351
2005-02-23
2014-09-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1871351
10.1063/1.1871351
SEARCH_EXPAND_ITEM