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Photoluminescence of silicon quantum dots in silicon nitride grown by and
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) PL peak positions as functions of the flow rates of and , and (b) PL spectra of samples grown by changing the flow rate of at a fixed flow rate of 400 sccm.

Image of FIG. 2.
FIG. 2.

FTIR spectra as a function of flow rate at a fixed flow rate of 800 sccm. Four absorption peaks are observed and the position was not changed for any of the samples.

Image of FIG. 3.
FIG. 3.

Relative FTIR absorption peak intensities as a function of flow rate. All peak intensities are normalized with respect to the peak intensity values at a flow rate of 30 sccm.

Image of FIG. 4.
FIG. 4.

HRTEM image of QDs embedded in a silicon nitride film: (a) Dark spots represent QDs with a dot density of about , (b) high-resolution lattice image, and (c) ring patterns for the transmission electron diffraction from QDs.

Image of FIG. 5.
FIG. 5.

Comparison of PL spectra of silicon nitride films grown by using (filled circle lines) and (filled square lines) and a silicon nitride film grown by using and subsequently annealed at 700 °C for 30 min under (filled triangle lines).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4