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(a) Schematic of a nanotube device on a membrane. The bottom layer is the gate electrode. (b) Optical microscope image of a membrane ( on a side) with electrodes. (c) Zoomed-in image of devices ( apart) near the edge of the membrane. (d) SEM image of a nanotube crossing the gap between two electrodes.
(a)–(c) curves for nanotube devices on the membrane at 0, 5, 10, 15, and . The arrows show which way the curves moved as the pressure increased. (d)–(f) values of the curves vs simulated strain and a fit to an exponential.
curves from for the SGS device in Fig. 2(b) (, gate grounded). The pressure was alternated between zero and a positive pressure increasing in increments.
at 0 and 0.1% strain vs tube diameter for ten devices along with theory curves.
Summary of band-gap information, AFM-measured tube diameter, and gauge factor for ten devices.
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