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Robustness of nanotube electronic transport to conformational deformations
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View: Figures


Image of FIG. 1.
FIG. 1.

Carbon nanotube devices fabricated using solution-based ac dielectrophoresis. The two panels show a single-wall NT connecting two gold electrodes. In (a), the gold electrodes were fabricated using EUVL, while in (b) the electrodes were fabricated by simple lift-off. Note the different size scales in the two panels.

Image of FIG. 2.
FIG. 2.

Measured current–voltage characteristic for the device in Fig. 1(b) (solid line) compared with two loop-free devices (dashed lines).

Image of FIG. 3.
FIG. 3.

Sketch of the NT for quantum transport calculations, with the dotted box indicating the scattering region. The figure also shows an electron at energy in band scattering into all other bands at energy .

Image of FIG. 4.
FIG. 4.

Calculated conductance as a function of incoming electron energy for loop radii of (solid line), (dotted line), and (dashed line). Panel (a) shows the results for a (17,0) NT while panel (b) is for a (18,0) NT. The inset in (b) shows the Fermi level transmission probability as a function of the inverse of the loop radius squared. See text for details.

Image of FIG. 5.
FIG. 5.

Room temperature conductance of metallic NTs as a function of loop radius (solid lines), and the associated strain energy (dashed lines). Curves from left to right correspond to (9,0), (12,0), and (18,0) NTs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Robustness of nanotube electronic transport to conformational deformations