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Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations
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10.1063/1.1873055
/content/aip/journal/apl/86/9/10.1063/1.1873055
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1873055
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The energy dispersion relations for the simulated Si nanowire structures with (a) and (b) . The inset shows a schematic diagram of the nanowire cross section . For the thinner wire , strong band splitting is observed at the point in the conduction band.

Image of FIG. 2.
FIG. 2.

The conduction (upper) and valence (lower) band edges (solid with circles) at point vs . The dashed line in the upper plot is for the conduction band edge calculated by the effective-mass (EM) approach with a simple “particle in a box” model.

Image of FIG. 3.
FIG. 3.

(a) The curves for the SNWT with and the ratio of the ON-current to the ’s vs (inset). The oxide thickness is assumed to be and the temperature is . (b) The average carrier velocities (under high drain bias) vs gate bias for the SNWTs with and . The inset shows the dependence of the transport effective mass (in the conduction band) at the point on . The carrier velocities for the and the show different trends with decreasing due to different physics.

Image of FIG. 4.
FIG. 4.

Average carrier injection velocity (under high drain bias) vs normalized Fermi level, , for the simulated SNWTs and planar MOSFETs. is equal to (left) and (right) for the SNWTs (planar MOSFETs).

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/content/aip/journal/apl/86/9/10.1063/1.1873055
2005-02-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1873055
10.1063/1.1873055
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