Full text loading...
The energy dispersion relations for the simulated Si nanowire structures with (a) and (b) . The inset shows a schematic diagram of the nanowire cross section . For the thinner wire , strong band splitting is observed at the point in the conduction band.
The conduction (upper) and valence (lower) band edges (solid with circles) at point vs . The dashed line in the upper plot is for the conduction band edge calculated by the effective-mass (EM) approach with a simple “particle in a box” model.
(a) The curves for the SNWT with and the ratio of the ON-current to the ’s vs (inset). The oxide thickness is assumed to be and the temperature is . (b) The average carrier velocities (under high drain bias) vs gate bias for the SNWTs with and . The inset shows the dependence of the transport effective mass (in the conduction band) at the point on . The carrier velocities for the and the show different trends with decreasing due to different physics.
Average carrier injection velocity (under high drain bias) vs normalized Fermi level, , for the simulated SNWTs and planar MOSFETs. is equal to (left) and (right) for the SNWTs (planar MOSFETs).
Article metrics loading...