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Imaging of out-of-plane interfacial strain in epitaxial thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) High-resolution cross-section TEM image of a high-quality thick film of PTO grown on STO. Inset: [100] Electron diffraction pattern with coherent (040) PTO∕STO (vertical arrow) and splitting in the (004) (horizontal arrow) reflections. The ∗ marks where (000) is located. (b) High-angle ADF image showing contrast.

Image of FIG. 2.
FIG. 2.

(a) Low-angle ADF image of PTO film grown on STO showing strain contrast at the interface and the top surface. (b) The same film tilted by 6° along [010] revealing a -axis compressive strained layer. White right top corner is end of imaging area.

Image of FIG. 3.
FIG. 3.

Intensity profile, averaged over parallel to the interface, for a PTO film on STO (upper full line) and a PTO film on Nb-doped STO (lower dotted line) with indicated bandwidth (vertical lines). The bandwidth is defined as the distance from the interface, as determined by the first Pb column, to the position where the intensity is one-half of the maximum mean intensity in the band relative to the mean intensity in the bulk of film.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Imaging of out-of-plane interfacial strain in epitaxial PbTiO3∕SrTiO3 thin films