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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with gate dielectric
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10.1063/1.1874312
/content/aip/journal/apl/86/9/10.1063/1.1874312
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1874312

Figures

Image of FIG. 1.
FIG. 1.

Time evolution of threshold voltage under static and dynamic stresses of different frequencies for (a) -MOSFET, and (b) -MOSFET. The evolution has a power-law dependence on stress time.

Image of FIG. 2.
FIG. 2.

(a) shift in alternating stress and passivation cycles of period . Symbols are experimental data, lines are from model simulation. (b) Frequency dependence of degradation in -MOSFETs after dynamic stress of , and (c) for -MOSFETs.

Image of FIG. 3.
FIG. 3.

(a) Three possible cases for the relationship between the number of trapped electrons versus stress time in one cycle of the dynamic stress. When increases from (where , and is the stress frequency) to , the number of trapped electrons increases from to . If the relationship between and is linear (curve L), then . Therefore, the number of trapped electrons during the same stressing time would be the same for two frequencies and the accumulative shift would be frequency independent. In order to explain the frequency dependence observed in dynamic charge trapping, must be larger than . This means that the relationship should be described by a concave-up curve. (b) Two-step procedure of capturing two electrons by a negative- trap. is the trap energy capturing one electron and is the number of those traps. is the trap energy capturing two electrons and is the number of those traps. When an additional electron is trapped, energy of the trap is lowered from E1 to E2 due to lattice distortion (Refs. 10 and 12). This energy lowering favors two electrons to occupy on the trap.

Image of FIG. 4.
FIG. 4.

Calculated time evolutions of using Eqs. (1)–(4) at various frequencies are plotted using lines, showing good agreement with the experimental data (symbols).

Tables

Generic image for table
Table I.

Definition of parameters used in the model.

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/content/aip/journal/apl/86/9/10.1063/1.1874312
2005-02-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1874312
10.1063/1.1874312
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