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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with gate dielectric
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10.1063/1.1874312
/content/aip/journal/apl/86/9/10.1063/1.1874312
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1874312
/content/aip/journal/apl/86/9/10.1063/1.1874312
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/content/aip/journal/apl/86/9/10.1063/1.1874312
2005-02-25
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/9/10.1063/1.1874312
10.1063/1.1874312
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