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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with gate dielectric
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16.After completion of this letter, we found that the negative- property of certain traps in has been confirmed by an ab initio calculation, as reported by J. Kang, E. C. Lee, K. J. Chang, and Y. G. Jin, Appl. Phys. Lett. 84, 3894 (2004).
17.The fast detrapping term in Eq. (3) for the passivation phase does not appear in Eq. (1) for the stress phase. This can be interpreted as follows. In a band diagram where the traps are mainly located at the high- dielectric near the interfacial layer, fast detrapping is due to electron tunneling from the trap to the Si substrate through the interfacial layer. When a positive gate voltage is applied in the stress phase, the one-electron trap energy in the high- dielectric moves into energy gap region of the Si substrate, and tunneling becomes forbidden.
18.When the second electron is emitted, it can be recaptured by some empty state nearby. A more rigorous form of Eq. (3) can be , where represents the recapture probability. As the detrapping of the first electron is very fast, the right-hand side of the equation is dominated by the first term. The value of is not important, and therefore dropped for simplicity.
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