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High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm
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View: Figures


Image of FIG. 1.
FIG. 1.

Qualitative comparison of the tunneling barrier height in cases of binary InAs/GaSb superlattices and ternary InAs/GaInSb superlattices. That for the binary case is significantly higher, thus leads to reduced tunneling current.

Image of FIG. 2.
FIG. 2.

AFM image of the diode surface over area. A roughness of 1.3–1.4 Å can be routinely achieved. Wide and clean atomic steps can be seen.

Image of FIG. 3.
FIG. 3.

Detectivity of the photodiodes vs wavelength at 77 K. A peak value was around . The quantum efficiency ranges 13%–32.7% labeled in the figure at three different wavelengths. The 90%–10% cutoff energy width was only 16.5 meV.

Image of FIG. 4.
FIG. 4.

Dark current comparison of the photodiode immediately after the processing and three months later. The comparison between diodes of and sized is also shown. The inset shows how the individual pixels were gold wire bonded. The band-to-band tunneling current converges at high reverse bias.

Image of FIG. 5.
FIG. 5.

Dark current modeling of the larger size photodiodes. Only G–R current and diffusion current were taken into account. Calculation agrees with the experimental data well.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm