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Reduction of the internal electric field in wurtzite -plane GaN self-assembled quantum dots
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10.1063/1.1977210
/content/aip/journal/apl/87/1/10.1063/1.1977210
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1977210
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of -plane QDs as a function of the average power density of the pulsed excitation measured at RT. The power dependence of the PL of -plane QDs is also shown for comparison.

Image of FIG. 2.
FIG. 2.

Backscattering -Raman spectra obtained for three polarization configurations under 2.41 eV (514.5 nm) excitation. The direction coincides with the -axis of the wurtzite structure. The asterisk refers to features attributed to the substrate.

Image of FIG. 3.
FIG. 3.

RT -plane QDs PL polarized parallel and perpendicular to the axis. The intensities have been normalized to their maximum value. The degree of polarization of the emission is shown as a function of the PL energy.

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/content/aip/journal/apl/87/1/10.1063/1.1977210
2005-06-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1977210
10.1063/1.1977210
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