1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of plasmons on terahertz conductivity measurements
Rent:
Rent this article for
USD
10.1063/1.1977213
/content/aip/journal/apl/87/1/10.1063/1.1977213
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1977213
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The real and imaginary parts of the conductivity according to (1) a pure Drude model and (2) a damped plasma resonance [Eq. (4)] as would be measured in a THz measurement. Here, and . A larger would lead to a sharper resonance.

Image of FIG. 2.
FIG. 2.

Conductivity of a photoexcited silicon wafer, excited with at 800 nm. Above 0.4 THz, the spectrum exhibits a Drude behavior. For comparison, a Drude model with is shown (dashed lines). The data for other excitation intensities differed only in amplitude.

Image of FIG. 3.
FIG. 3.

Conductivity of PVP with embedded silicon particles after photoexcitation. The dashed lines represent the plasmon model in Eq. (4), with Drude damping times of 0.15, 0.08, and 0.038 ps, plasmon resonance frequencies of 0.4, 0.8, and 1.85 THz, at excitation intensities of 1.9, 22, and , respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/87/1/10.1063/1.1977213
2005-06-27
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of plasmons on terahertz conductivity measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1977213
10.1063/1.1977213
SEARCH_EXPAND_ITEM