Full text loading...
The real and imaginary parts of the conductivity according to (1) a pure Drude model and (2) a damped plasma resonance [Eq. (4)] as would be measured in a THz measurement. Here, and . A larger would lead to a sharper resonance.
Conductivity of a photoexcited silicon wafer, excited with at 800 nm. Above 0.4 THz, the spectrum exhibits a Drude behavior. For comparison, a Drude model with is shown (dashed lines). The data for other excitation intensities differed only in amplitude.
Conductivity of PVP with embedded silicon particles after photoexcitation. The dashed lines represent the plasmon model in Eq. (4), with Drude damping times of 0.15, 0.08, and 0.038 ps, plasmon resonance frequencies of 0.4, 0.8, and 1.85 THz, at excitation intensities of 1.9, 22, and , respectively.
Article metrics loading...