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Study of fluorine behavior in silicon by selective point defect injection
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10.1063/1.1984094
/content/aip/journal/apl/87/1/10.1063/1.1984094
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1984094
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Different surface layers utilized in samples for point defect injection: (a) and LTO layers for inert annealing, (b) layer for vacancy injection, and (c) bare silicon surface for interstitial injection.

Image of FIG. 2.
FIG. 2.

Fluorine SIMS profiles after a implant and after anneal for at under different point defect injection (interstitial, vacancy, and inert) conditions.

Image of FIG. 3.
FIG. 3.

Fluorine SIMS profiles after a implant and after anneal at for , , and under interstitial injection conditions.

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/content/aip/journal/apl/87/1/10.1063/1.1984094
2005-06-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of fluorine behavior in silicon by selective point defect injection
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1984094
10.1063/1.1984094
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