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Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
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10.1063/1.1988986
/content/aip/journal/apl/87/1/10.1063/1.1988986
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1988986
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of (a) graded SiGe layer without inserted-Si layers grown on thick Si buffer layer on Si substrate and (b) graded SiGe with tensile-strained Si layers.

Image of FIG. 2.
FIG. 2.

AFM images of (a) SiGe without inserted Si layers, (b) inserted Si layer on top of SiGe with Ge surface content of 20%, and (c) SiGe with inserted Si layers.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of (a) SiGe without inserted Si layers, (b) and (c) SiGe with inserted Si layers; (c) is a high magnification image near the strained Si layers.

Image of FIG. 4.
FIG. 4.

004 and 224 high-resolution x-ray reciprocal space maps of (a) SiGe without inserted Si layers and (b) SiGe with inserted Si layers.

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/content/aip/journal/apl/87/1/10.1063/1.1988986
2005-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1988986
10.1063/1.1988986
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