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characteristics of Ge photodetectors on Si with (black line) and without (gray line) backside silicidation. The insets of the figure schematically show the cross sections of the devices. LTO is the acronym of “low temperature oxide” in the figure.
Responsivity spectra of 0.20% (without backside silicidation) and 0.25% (with backside silicidation) tensile strained Ge photodetectors at different reverse bias. The inset of the figure shows the reflectivity spectrum at the surface of the devices.
Secondary ion mass spectroscopy (SIMS) depth profile of a diameter, 0.25% tensile strained Ge photodiode.
Absorption spectra of bulk Ge (-∎-), 0.20% (—), and 0.25% (—) tensile strained Ge. The absorption coefficients in the band have been enhanced by nearly an order of magnitude in 0.25% tensile strained Ge compared with bulk Ge. The direct transition energies from the top of the light and heavy hole bands to the bottom of conduction bands, calculated with the deformation potential values reported in Ref. 5, are indicated by “lh” and “hh” in the figure.
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