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Tensile strained Ge photodetectors on Si platform for C and L band telecommunications
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10.1063/1.1993749
/content/aip/journal/apl/87/1/10.1063/1.1993749
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1993749
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of Ge photodetectors on Si with (black line) and without (gray line) backside silicidation. The insets of the figure schematically show the cross sections of the devices. LTO is the acronym of “low temperature oxide” in the figure.

Image of FIG. 2.
FIG. 2.

Responsivity spectra of 0.20% (without backside silicidation) and 0.25% (with backside silicidation) tensile strained Ge photodetectors at different reverse bias. The inset of the figure shows the reflectivity spectrum at the surface of the devices.

Image of FIG. 3.
FIG. 3.

Secondary ion mass spectroscopy (SIMS) depth profile of a diameter, 0.25% tensile strained Ge photodiode.

Image of FIG. 4.
FIG. 4.

Absorption spectra of bulk Ge (-∎-), 0.20% (—), and 0.25% (—) tensile strained Ge. The absorption coefficients in the band have been enhanced by nearly an order of magnitude in 0.25% tensile strained Ge compared with bulk Ge. The direct transition energies from the top of the light and heavy hole bands to the bottom of conduction bands, calculated with the deformation potential values reported in Ref. 5, are indicated by “lh” and “hh” in the figure.

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/content/aip/journal/apl/87/1/10.1063/1.1993749
2005-07-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1993749
10.1063/1.1993749
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